讲座嘉宾：Wei Chen

讲座题目：Interface Engineered 2D Materials for Functional Devices

讲座时间：2024年6月12日（周三）下午16:00-17:00

讲座地点：工四一楼学术报告厅

报告人简介：

   Professor CHEN Wei is currently a Provost’s Chair Professor in both the Chemistry Department and Physics Department at the National University of Singapore (NUS), and the Associate Dean for Research in Faculty of Science, NUS. He received his Bachelor degree in Chemistry from Nanjing University (China) in 2001 and his PhD degree from the Chemistry Department at NUS in 2004. His current research interests include molecular-scale interface engineering for 2D materials based electronics and optoelectronics, and interface-controlled nanocatalysis for energy and environmental research.Prof. Chen is a recipient of Singapore Young Scientist Award (2012),Mitsui Chemicals-SNICIndustry Award (2020),NRF Investigatorship (2023), Provost’s Chair Professor (2023) and theHighly Cited Researcher by Clarivate (2017, 2018, 2019, 2021, 2023).

报告摘要：

Two-dimensional (2D) layered materials like graphene and transition metal dichalcogenides (TMDs)have been considered aspromising building blocksfor thenextgeneration nanoelectronic devices,showinggreat potentialstoextendthe scaling limits existing insilicon based complementary metal-oxide-semiconductor field-effect-transistors (CMOS-FET)as well as to serve as ahigh mobilityalternative toorganic semiconductorsfor flexible electronic and optoelectronic devices. However, the existence of large contact resistance at the interface betweenthe TMDs semiconductor and any bulk (or 3D) metal drastically restrains the intrinsic transport properties of materials and the performance of realistic devices. Thus, it is a crucial to optimize the contacts and lower the contact resistance between 2Dsemiconductors and metal electrodes.

In this talk, I will summarize and discuss our recent work for the development ofscalable Ohmic contact engineering approaches to 2D materials that can be easily integrated into existing semiconductor device production processes.We will focus on theOhmic contact to 2D materials enabled by surface charge transfer doping induced semiconductor-to-metal phase transition, and the demonstration of high performance 2D materials based electronic devices with Ohmic contact.